The part number "IRLML6401TRPBF" corresponds to a MOSFET (Metal-Oxide-Semiconductor Field-Effect transistor ), specifically from Infineon Technologies, a reputable semiconductor company. It is part of their MOSFET series, and it is typically used in low-voltage and medium-current applications for power switching. The TRPBF suffix indicates that it is a part in a reel packaging (TR) with a lead-free (Pb-free) finish.
Package and Pin Function Specifications:
The IRLML6401TRPBF is usually offered in a SOT-23 package with 3 pins. Below is a detailed description of the pinout and corresponding functions:
Pin Number Pin Name Function 1 Drain (D) The Drain pin is where the current flows out from the transistor. This is the pin where the load is connected, and it is the high-voltage side of the MOSFET. 2 Source (S) The Source pin is the return path for the current that flows through the MOSFET. It is the low-voltage side and is typically grounded. 3 Gate (G) The Gate pin controls the switching of the MOSFET. A voltage applied here determines whether the MOSFET is on (conducting) or off (non-conducting).This component is a logic-level N-channel MOSFET, meaning that it can be directly driven by logic-level voltages (e.g., 3.3V or 5V) without requiring a gate driver for switching.
Circuit Principle Instructions:
When the Gate voltage is 0V (relative to Source), the MOSFET is off (not conducting). When the Gate voltage is higher than the Threshold voltage (Vgs(th)), the MOSFET turns on, allowing current to flow from Drain to Source. The MOSFET operates in the linear region (for analog applications) or the saturation region (for switching applications).Detailed FAQ for IRLML6401TRPBF MOSFET:
Q: What is the package type of the IRLML6401TRPBF? A: The IRLML6401TRPBF comes in a SOT-23 package, which has 3 pins. Q: What is the maximum Gate threshold voltage of the IRLML6401TRPBF? A: The Gate threshold voltage (Vgs(th)) for the IRLML6401TRPBF is typically between 0.5V and 1.5V. Q: What is the maximum Drain-Source voltage (Vds) of the IRLML6401TRPBF? A: The maximum Drain-Source voltage (Vds) is 20V for the IRLML6401TRPBF. Q: What is the maximum continuous Drain current for the IRLML6401TRPBF? A: The maximum continuous Drain current is 2.5A when the MOSFET is in a typical application at 25°C. Q: How do you turn the IRLML6401TRPBF MOSFET on and off? A: The MOSFET is turned on by applying a positive voltage to the Gate pin relative to the Source pin. It is turned off by applying 0V to the Gate. Q: What is the typical Rds(on) of the IRLML6401TRPBF? A: The typical Rds(on) (resistance between Drain and Source when the MOSFET is on) is 80mΩ at Vgs = 4.5V. Q: What is the maximum power dissipation of the IRLML6401TRPBF? A: The maximum power dissipation is 1.25W at an ambient temperature of 25°C. Q: Can the IRLML6401TRPBF be used for both switching and linear applications? A: Yes, the IRLML6401TRPBF can be used for both switching and linear (analog) applications, though it is typically used for switching applications. Q: What is the Gate capacitance of the IRLML6401TRPBF? A: The typical Gate capacitance (Cgs) is around 6.4nF at Vds = 10V.Q: What are the operating temperature limits for the IRLML6401TRPBF?
A: The IRLML6401TRPBF operates within a temperature range of -55°C to +150°C.Q: How do I connect the IRLML6401TRPBF in a circuit?
A: In a typical switching circuit, connect the Drain to the load, the Source to ground, and control the Gate with a logic signal to switch the MOSFET.Q: What are the features of the IRLML6401TRPBF MOSFET?
A: The IRLML6401TRPBF features low Rds(on), low Gate threshold voltage, and is optimized for logic-level control.Q: Is there a specific Gate voltage required to fully turn on the IRLML6401TRPBF?
A: For full conduction, the Gate voltage should be at least 4.5V to minimize Rds(on).Q: What is the reverse recovery time for the IRLML6401TRPBF?
A: The reverse recovery time is very low, typically in the range of 10ns.Q: How sensitive is the IRLML6401TRPBF to electrostatic discharge (ESD)?
A: The IRLML6401TRPBF has ESD protection and can withstand typical human-body model (HBM) stress of up to 2kV.Q: What are the input characteristics of the Gate for the IRLML6401TRPBF?
A: The Gate capacitance is relatively low, and the input current is minimal when the Gate is driven.Q: Can I use the IRLML6401TRPBF for high-speed switching?
A: Yes, the IRLML6401TRPBF is suitable for high-speed switching applications due to its low Gate charge and capacitance.Q: What is the maximum transient thermal impedance (θJA) of the IRLML6401TRPBF?
A: The maximum thermal resistance is 250°C/W in the SOT-23 package.Q: What is the typical Gate charge (Qg) for the IRLML6401TRPBF?
A: The typical Gate charge (Qg) is around 5nC at Vds = 10V.Q: Can the IRLML6401TRPBF be used in automotive applications?
A: Yes, the IRLML6401TRPBF can be used in automotive and other industrial applications due to its wide operating temperature range and low Rds(on).The information provided above covers the most critical details related to the pin function specifications, packaging, and a detailed FAQ for the IRLML6401TRPBF MOSFET. If you need more specific data or a more complex circuit explanation, let me know!
