The LMBT3904LT1G is a model number for a BJT (Bipolar Junction transistor ), specifically an NPN transistor used for switching and amplification purposes. It is manufactured by ON Semiconductor.
Here’s a detai LED breakdown of its specifications and pin function details, including the package and pinout information, followed by the FAQ for common questions about this part:
1. Package Type:
Package Type: TO-92 Package Form: Plastic TO-92 (small and compact 3-lead package)2. Pinout Configuration:
The LMBT3904LT1G comes in a TO-92 package, which has 3 pins:
Pin Number Pin Name Description Pin 1 Emitter This is the Emitter of the NPN transistor. It is typically connected to ground or a lower potential. Pin 2 Base This is the Base of the transistor. It controls the current flow between the collector and emitter by applying a small current to the base. Pin 3 Collector This is the Collector of the transistor. The current flows through the collector from the supply voltage when the transistor is turned on.3. Detailed Pin Function Specifications:
Emitter (Pin 1) The emitter is the terminal that releases charge carriers into the base. When connected to a lower potential (ground in most circuits), the current flows from the collector through the transistor to the emitter. In common-emitter configuration, it is often directly grounded or connected to the negative side of the circuit. Base (Pin 2) The base controls the transistor's operation. A small current applied to the base terminal allows a much larger current to flow from the collector to the emitter. This is the principle behind transistor amplification. The base current, typically denoted as Ib, should be sufficient to turn the transistor "on," allowing current flow. Collector (Pin 3) The collector is where the current from the load flows out after passing through the transistor. In amplification or switching applications, this pin is often connected to the higher potential supply voltage or to a load.4. FAQ - Frequently Asked Questions for the LMBT3904LT1G:
Q: What is the maximum collector current (Ic) for the LMBT3904LT1G? A: The maximum collector current for the LMBT3904LT1G is 200 mA. Q: Can the LMBT3904LT1G be used in switching applications? A: Yes, the LMBT3904LT1G is ideal for use in switching applications due to its ability to handle moderate currents and fast switching times. Q: What is the gain (hFE) of the LMBT3904LT1G? A: The typical DC current gain (hFE) of the LMBT3904LT1G is 100 to 300. Q: What is the voltage rating (Vce) of the LMBT3904LT1G? A: The LMBT3904LT1G has a collector-emitter voltage (Vce) of up to 40V. Q: What is the thermal resistance of the LMBT3904LT1G? A: The thermal resistance of the LMBT3904LT1G is 200°C/W. Q: Can the LMBT3904LT1G be used for signal amplification? A: Yes, this transistor is frequently used for low to medium power amplification in audio and RF circuits. Q: What is the maximum operating temperature for the LMBT3904LT1G? A: The maximum operating temperature for the LMBT3904LT1G is 150°C. Q: How should I connect the base of the LMBT3904LT1G? A: The base of the LMBT3904LT1G should be driven by a current-limiting resistor connected to the input signal source. Q: What is the typical saturation voltage (Vce(sat)) for this transistor? A: The typical saturation voltage (Vce(sat)) for the LMBT3904LT1G is 0.3V.Q: Can the LMBT3904LT1G be used in a Darlington transistor circuit?
A: The LMBT3904LT1G is a single-transistor, not a Darlington pair, but it can be used as a part of a Darlington configuration in certain applications.Q: What is the base-emitter voltage (Vbe) for the LMBT3904LT1G?
A: The typical base-emitter voltage (Vbe) for the LMBT3904LT1G is 0.7V when conducting.Q: Can this transistor be used in a low-power amplifier circuit?
A: Yes, it is commonly used in low-power amplifier circuits due to its moderate current gain.Q: What is the power dissipation for the LMBT3904LT1G?
A: The maximum power dissipation for the LMBT3904LT1G is 625 mW.Q: How does the LMBT3904LT1G behave at higher currents?
A: As current increases, the transistor may enter saturation, and the voltage drop across the collector-emitter junction will increase.Q: What are the advantages of using LMBT3904LT1G in electronic circuits?
A: The advantages include its small size, fast switching speed, and efficiency in low- to medium-power applications.Q: What is the recommended operating voltage for the LMBT3904LT1G?
A: The recommended operating voltage for this transistor is typically 5V to 15V for most applications.Q: How should I calculate the base current for the LMBT3904LT1G?
A: Base current (Ib) can be calculated using Ib = Ic / hFE, where Ic is the collector current and hFE is the current gain.Q: What type of load can the LMBT3904LT1G drive?
A: The LMBT3904LT1G can drive small resistive loads, LEDs, and low-power motors, but is limited by its maximum collector current rating.Q: How should I handle the LMBT3904LT1G when mounting it?
A: The transistor should be handled with care, avoiding static discharge, and mounted in a heat-sink if operating at high power levels to prevent overheating.Q: Can the LMBT3904LT1G be used in high-frequency circuits?
A: While the LMBT3904LT1G is suitable for many signal amplification applications, its transition frequency (fT) of 250 MHz limits its use in very high-frequency circuits.This covers the detailed explanation of the pin function, packaging, and some frequently asked questions for the LMBT3904LT1G. If you need additional specific information, feel free to ask!
