The MMBT3906LT1G is a NPN Bipolar Junction transistor (BJT) manufactured by ON Semiconductor, commonly used in low-power signal switching applications. This part is generally available in the SOT-23 package, which is a small Su RF ace Mount Device (SMD) type.
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MMBT3906LT1G Pin Function and Specifications
Package Type: SOT-23 (3 pins)The SOT-23 is a 3-pin surface-mount package that typically contains a transistor with the following pin configuration:
Pin 1 (Collector): The collector pin is used to collect the current from the transistor and is usually connected to a load or positive voltage supply. Pin 2 (Base): The base controls the transistor’s operation. The current flowing into the base determines how much current flows from the collector to the emitter (it’s the control pin). Pin 3 (Emitter): The emitter is the pin through which current flows out of the transistor. It is typically connected to ground or a negative voltage supply.Full Pinout and Description of Pins for SOT-23 Package
Pin Pin Name Function Pin 1 Collector The collector is connected to the load or the positive voltage supply. It collects the current. Pin 2 Base The base controls the transistor. It receives the input current that regulates the transistor's behavior. Pin 3 Emitter The emitter pin allows current to flow out of the transistor, typically connected to ground or a negative voltage.Circuit Principle Instructions
The MMBT3906LT1G is an NPN transistor, meaning it operates by having a small current flow into the base, which allows a larger current to flow from the collector to the emitter. Here’s how it works:
Base Current (IB): A small current is applied to the base. This current controls the flow of the larger current between the collector and emitter. Collector-Emitter Current (IC): When the base-emitter junction is forward biased (with a voltage around 0.7V for silicon BJTs), a larger current flows from the collector to the emitter. Amplification: The transistor amplifies the input signal at the base, which controls a larger current flowing between the collector and emitter. Switching: The transistor can act as a switch, turning on or off based on the voltage applied to the base.20 Common FAQ on MMBT3906LT1G
Q: What is the function of the base pin in the MMBT3906LT1G? A: The base pin of the MMBT3906LT1G controls the current flow between the collector and emitter by applying a small voltage or current. Q: How does the MMBT3906LT1G work? A: The MMBT3906LT1G is a transistor that amplifies a small current at the base to control a larger current flow between the collector and emitter. Q: What is the typical application of MMBT3906LT1G? A: It is commonly used for switching and amplification in low-power applications. Q: What type of package is MMBT3906LT1G in? A: The MMBT3906LT1G comes in a small SOT-23 surface-mount package. Q: How many pins does the MMBT3906LT1G have? A: The MMBT3906LT1G has 3 pins: collector, base, and emitter. Q: What is the maximum collector current for the MMBT3906LT1G? A: The maximum collector current is typically 200 mA. Q: Can MMBT3906LT1G be used for high-frequency signals? A: Yes, it is suitable for switching and low-frequency amplification, but it is not typically used for high-frequency RF applications. Q: What is the voltage rating for the MMBT3906LT1G? A: The MMBT3906LT1G has a collector-emitter voltage rating of 40V. Q: What is the current gain (hFE) of the MMBT3906LT1G? A: The current gain is typically between 100 and 300 depending on the operating conditions.Q: Is the MMBT3906LT1G a PNP or NPN transistor?
A: The MMBT3906LT1G is an NPN transistor.Q: What is the operating temperature range for MMBT3906LT1G?
A: The operating temperature range is typically -55°C to 150°C.Q: What is the significance of the “T1G” in the MMBT3906LT1G part number?
A: “T1G” indicates that the transistor is in a tape-and-reel packaging format for easy handling and mounting in automated systems.Q: Can I use MMBT3906LT1G for power amplification?
A: It is more suitable for low-power amplification rather than high-power amplification, given its low current rating.Q: What is the gain bandwidth product (ft) for MMBT3906LT1G?
A: The transistor typically has a transition frequency (ft) of about 250 MHz.Q: How does the MMBT3906LT1G compare with the MMBT3904 ?
A: The MMBT3906LT1G is an NPN transistor, while the MMBT3904 is the PNP counterpart. Both are low-power, general-purpose transistors but with opposite polarity.Q: What is the maximum power dissipation for the MMBT3906LT1G?
A: The maximum power dissipation is around 500 mW.Q: Is MMBT3906LT1G a good choice for audio circuits?
A: Yes, it can be used for low-power audio signal amplification.Q: Can I use MMBT3906LT1G for switching applications?
A: Yes, it is ideal for low-power switching applications where the base current controls larger collector-emitter currents.Q: How do I calculate the base resistor for MMBT3906LT1G?
A: The base resistor is determined by the desired base current, which is typically a fraction of the collector current, and the base-emitter voltage (approximately 0.7V).Q: Is the MMBT3906LT1G suitable for digital circuits?
A: It can be used in digital circuits for switching low-level signals, but more suitable transistors exist for high-speed digital applications.This should give you a detailed understanding of the MMBT3906LT1G transistor, its pin configuration, functionality, and common usage questions. If you need further clarification or more technical details, feel free to ask!
